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Samsung 500GB 850 EVO M.2 SSD

  • 500GB Capacity
  • PRODUCT TYPE M.2
  • SATA 6Gb/s Interface, compatible with SATA
  • Up to 540 MB/sec Sequential Read
  • Up to 500 MB/sec Sequential Write

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QuickFind: 706331

Mfr part code: MZ-N5E500BW

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    Samsung 500GB 850 EVO M.2 SSD Product Description

    Samsung 500GB 850 EVO M.2 SSD


    3D V-NAND Technology

    Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.


    TurboWrite Technology

    Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance. 


    RAPID Mode

    Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM. 


    Enhanced Endurance and Reliability

    The 850 EVO doubles the endurance* and reliability** compared to the previous generation 840 EVO** and features a class-leading*** 5 year warranty. With enhanced long-term reliability, the 850 EVO assures long-term dependable performance of up to 30% longer than the previous generation 840 EVO. 


    PRODUCT TYPE M.2

    SERIES N/A

    INTERFACE SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

    CAPACITY 500GB (1GB=1 Billionbyte by IDEMA) 

    SEQUENTIAL READ SPEED Up to 540 MB/sec Sequential Read * 

    SEQUENTIAL WRITE SPEED Up to 500 MB/sec Sequential Write * 

    MEMORY SPEED Samsung 32 layer 3D V-NAND

    Samsung 512 MB Low Power DDR3 SDRAM

    DATA TRANSFER SPEED N/A

    Technical Specifications

    General

    Features Hardware Full Disk Encryption (FDE), TRIM support, DevSleep mode, Microsoft eDrive compatible, 3D V-NAND Technology, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, Worldwide Name (WWN), RAPID mode support, TurboWrite Technology, Samsung MGX Controller, S.M.A.R.T., 256-bit AES, IEEE 1667
    Depth 80.3 mm
    Height 1.52 mm
    Device Type Solid state drive - internal
    Capacity 500 GB
    Hardware Encryption Yes
    NAND Flash Memory Type Triple-level cell (TLC)
    Form Factor M.2 2280
    Interface SATA 6Gb/s
    Buffer Size 512 MB
    Width 22.1 mm

    Expansion & Connectivity

    Compatible Bays 1 x M.2 - internal
    Interfaces 1 x SATA 6 Gb/s - M.2 Card
    Compatible Bay M.2 2280

    Manufacturer Warranty

    Service & Support Limited warranty - 5 years
    Service & Support Details Limited warranty - 5 years

    Power

    Power Consumption 50 mW (active) ¦ 3.5 Watt (average) ¦ 4.7 Watt (maximum) ¦ 2 mW (sleep)

    Performance

    Drive Transfer Rate 600 MBps (external)
    Internal Data Rate 540 MBps (read) / 500 MBps (write)
    Maximum 4KB Random Write 89000 IOPS

    Reliability

    MTBF 1,500,000 hours

    Software & System Requirements

    Software Included Samsung Magician Software, Samsung Data Migration

    Environmental Parameters

    Min Operating Temperature 0 °C
    Max Operating Temperature 70 °C
    Shock Tolerance (non-operating) 1500 g @ 0.5 ms half-sine pulse

    Customer Questions

    Samsung 500GB 850 EVO M.2 SSD Ask an owner

    Samsung 500GB 850 EVO M.2 SSD Product Discussion

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